FDC6320C Datasheet, ON Semiconductor

N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V. P-Ch 25 V, -0.12 A, RDS(ON) = 13 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V c.

as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, .

These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistanc.

FDC6321C

FDC6322C

FDC6323L

FDC6324L

FDC6325L

FDC6326L

FDC6327C

FDC6329L

FDC6301N

FDC6302P

FDC6303N

FDC6304P

FDC6305N